TECHNOLOGY = t018s6ml
DIELECTRIC PASS3 {THICKNESS=0.600 ER=7.9 }
DIELECTRIC PASS2 {THICKNESS=0.150 ER=4.2 }
DIELECTRIC PASS1 {THICKNESS=1.000 ER=4.2 }
CONDUCTOR metal6 {THICKNESS= 0.99 WMIN= 0.44 SMIN= 0.46 RPSQ=0.036 CAPACITIVE_ONLY_ETCH=-0 }
DIELECTRIC IMD5b {THICKNESS=0.350 ER=4.2 }
DIELECTRIC IMD5a {THICKNESS=1.180 ER=3.7 }
CONDUCTOR metal5 {THICKNESS= 0.53 WMIN= 0.28 SMIN= 0.28 RPSQ=0.078 CAPACITIVE_ONLY_ETCH=-0 }
DIELECTRIC IMD4b {THICKNESS=0.200 ER=4.2 }
DIELECTRIC IMD4a {THICKNESS=1.180 ER=3.7 }
CONDUCTOR metal4 {THICKNESS= 0.53 WMIN= 0.28 SMIN= 0.28 RPSQ=0.078 CAPACITIVE_ONLY_ETCH=-0 }
DIELECTRIC IMD3b {THICKNESS=0.200 ER=4.2 }
DIELECTRIC IMD3a {THICKNESS=1.180 ER=3.7 }
CONDUCTOR metal3 {THICKNESS= 0.53 WMIN= 0.28 SMIN= 0.28 RPSQ=0.078 CAPACITIVE_ONLY_ETCH=-0 }
DIELECTRIC IMD2b {THICKNESS=0.200 ER=4.2 }
DIELECTRIC IMD2a {THICKNESS=1.180 ER=3.7 }
CONDUCTOR metal2 {THICKNESS= 0.53 WMIN= 0.28 SMIN= 0.28 RPSQ=0.078 CAPACITIVE_ONLY_ETCH=-0 }
DIELECTRIC IMD1b {THICKNESS=0.200 ER=4.2 }
DIELECTRIC IMD1a {THICKNESS=1.180 ER=3.7 }
CONDUCTOR metal1 {THICKNESS= 0.53 WMIN= 0.23 SMIN= 0.23 RPSQ=0.078 CAPACITIVE_ONLY_ETCH=-0 }
DIELECTRIC ILD_B {THICKNESS=0.550 ER=4.0 }
DIELECTRIC ILD_C {THICKNESS=0.200 ER=4.0 }
CONDUCTOR poly {THICKNESS= 0.20 WMIN= 0.18 SMIN= 0.25 RPSQ=7.8 CAPACITIVE_ONLY_ETCH=0.01 }
DIELECTRIC FOX_A {THICKNESS=0.050 ER=3.9 }
DIELECTRIC FOX_B {THICKNESS=0.160 ER=3.9 }
CONDUCTOR OD {THICKNESS= 0.16 WMIN= 0.22 SMIN= 0.22 RPSQ=4.1}
DIELECTRIC FOX_C {THICKNESS=0.190 ER=3.9 }
VIA polyCont { FROM=poly TO=metal1 AREA=0.0484 RPV=6.7 }
VIA odCont { FROM=OD TO=metal1 AREA=0.0484 RPV=10 }
VIA weltap { FROM=substrate TO=OD }
VIA via5 { FROM=metal5 TO=metal6 AREA=0.1296 RPV=2.54 }
VIA via4 { FROM=metal4 TO=metal5 AREA=0.0676 RPV=6.4 }
VIA via3 { FROM=metal3 TO=metal4 AREA=0.0676 RPV=6.4 }
VIA via2 { FROM=metal2 TO=metal3 AREA=0.0676 RPV=6.4 }
VIA via1 { FROM=metal1 TO=metal2 AREA=0.0676 RPV=6.4 }
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